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| Schottky Barrier Diodes (SBD) MA2HD09 Silicon epitaxial planar type Unit : mm For high-frequency rectification 3.2 0.3 0 to 0.05 * Small and thin Half New Mini-power package * Allowing to rectify under (IF(AV) = 1 A) condition * Low VF (forward voltage) type: VF < 0.4 V(at IF = 1 A) 1.9 0.3 2 1 I Absolute Maximum Ratings Ta = 25C Parameter Reverse voltage (DC) Repetitive peak reverse voltage Average forward current Non-repetitive peak forward surge current* Junction temperature Storage temperature Symbol VR VRRM IF(AV) IFSM Tj Tstg Rating 30 30 1 25 125 -40 to +125 Unit V V A A C C 0.25 - 0.05 0.9 0.4 3.8 0.2 0.9 0.4 1 : Anode 2 : Cathode Half New Mini-Power Type Package Marking Symbol: PR Note) * : The peak-to-peak value in one cycle of 50 Hz sine-wave (non-repetitive) I Electrical Characteristics Ta = 25C 3C Parameter Reverse current (DC) Forward voltage (DC) Terminal capacitance Reverse recovery time* Symbol IR VF Ct trr VR = 30 V IF = 1 A VR = 10 V, f = 1 MHz IF = IR = 100 mA Irr = 0.1 * IR, RL = 100 50 15 Conditions Min Typ Max 3 0.40 Unit mA V pF ns Note) 1. Rated input/output frequency: 20 MHz 2. * : trr measuring instrument Bias Application Unit N-50BU tr 10% Input Pulse tp t IF trr t Irr = 0.1 * IR IF = 100 mA IR = 100 mA RL = 100 Output Pulse A VR Pulse Generator (PG-10N) Rs = 50 W.F.Analyzer (SAS-8130) Ri = 50 90% tp = 2 s tr = 0.35 ns = 0.05 1.85 0.3 + 0.1 1.0 0.2 I Features 1 MA2HD09 IF V F 10 1 10-1 Ta = 125C Schottky Barrier Diodes (SBD) IR V R Ta = 125C 10-2 Forward current IF (A) Reverse current IR (A) 10-1 10-2 10-3 10-4 10-5 10-6 25C 75C 75C 10-3 25C 10-4 10-5 0 0.1 0.2 0.3 0.4 0.5 0.6 10-6 Forward voltage VF (V) 0 5 10 15 20 25 30 Reverse voltage VR (V) 2 |
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